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| DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 12 W min. with 12 dB gain over 875 - 915 MHz * 10:1 LOAD VSWR CAPABILITY * BeO FREE AMPLIFIER. DESCRIPTION The DB-915-12W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed as booster for GSM-R applications. The DB-915-12W is designed in cooperation with Europeenne de Telecommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 12 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ORDER CODE DB-915-12W MECHANICAL SPECIFICATION L=60 mm W=30 mm H=10 mm ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol VDD ID PDISS TCASE Tamb Supply voltage Drain Current Power Dissipation at TCASE = +85 C Operating Case Temperature Max. Ambient Temperature Parameter Value 18 4.5 67 -20 to +85 +55 Unit V A W oC o C November, 20 2002 1/5 DB-915-12W ELECTRICAL SPECIFICATION (Tamb = +25 oC, Vdd = 26 V, Idq = 150 mA) Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 12 W Over frequency range: 875 - 915 MHz Over frequency range and @ POUT = 12 W POUT from 0.1 W to 60 W P1dB Input return Loss POUT from 0.1 W to 12W POUT = 12 W Load Mismatch all phases @ POUT = 12 W 10:1 VSWR all phases and POUT from 0.1 to 12 W POUT = 12 WPEP 10:1 -76 -25 dBc dBc 45 50 -6 -30 Test Conditions Min. 875 11 12 12 +/- 0.5 1 Typ. Max. 915 Unit MHz dB W dB dB % dB dBc 2/5 DB-915-12W TYPICAL PERFORMANCE Power Gain vs. Frequency 16 Output Power vs. Frequency 24 22 20 15 14 Pin = 25 dBm 18 16 Pout (W) 14 12 10 P in = 31 dB m 13 Gp (dB) 12 Pin = 28 dBm 11 Pin = 31 dB m 10 Vcc = 12.5 V Idq = 150 m A P in = 28 dB m 8 6 P in = 25 dB m 4 Vc c = 12.5 V Idq = 150 m A 865 875 885 895 f (MHz ) 905 915 925 9 8 865 875 885 895 f (MHz) 905 915 925 2 Drain Current vs. Frequency 4.0 Input Return Loss vs. Frequency 0 3.5 -2 3.0 P in = 31 dB m 2.5 -4 -6 RL (dB) P in = 31 dB m Id (A) 2.0 P in = 28 dB m -8 P in = 25 dB m 1.5 P in = 25 dB m 1.0 -10 -12 P in = 28 dB m 0.5 Vc c = 12.5 V Idq = 150 m A 865 875 885 895 f (MHz) 905 915 925 -14 Vc c = 12.5 V Idq = 150 m A 865 875 885 895 f (MHz) 905 915 925 0.0 -16 Output Power vs. Frequency 18 16 14 Vdd = 15.6 V 12 Pout (W) Vdd = 12.5 V 10 Vdd = 10.8 V 8 6 4 P in = 28 dB m Idq = 150 m A 2 865 875 885 895 f (MHz ) 905 915 925 3/5 DB-915-12W TEST FIXTURE COMPONENT LAYOUT TEST CIRCUIT PHOTOMASTER TEST CIRCUIT COMPONENT PART LIST Ref. 1 CV1, C V2 C4 C 10 C 12 C5, C 7,C9 C13 C 6, C 8 C3 C2 C1 R1 R2 P1 D1 T1 BOAR D V alu e RF Pow er Am plifier Circuit Trim cap acitor HQ 0.6 -4 .5pF 500 V C hip Capa cito r H Q 060 3 100p F TA 5% 5 0V Chip Cap acitor HQ 5 .6pF TB +/- 0,25pF 5 00V Chip Cap acitor HQ 4 .7pF TB +/- 0,25pF 5 00V Chip Capa citor HQ 10 pF TB 5% 500V Chip Capa citor HQ 47 pF TB 5% 500V Chip Capa cito r HQ 100 pF TB 5 % 500V Capa cito r 1206 10 0nF 63V X7R 1 0% Capa citor CM S tantale 1 F 20% 35 V Resisto r C M S 4 ,7K 1206 1 /4W 5% Resistor CM S 10K 1206 1/4W 5% Trim resistor CM S ce rm et 3224W 10 K Zener Diode 5 .1V 500m W SOD 80 RF LDM OS Transistor 12V 15W TEFLON-GLASS Er = 2.55 , THK = 0.762 mm , C OPPER FLANGE 2 m m THIC KN ESS Ref. Manu facturer PC IR50 1003 AT27273 50 0-C HA-101-JVLE 501 -C HB-3R3-C VLE 501 -C HB-8R2-C VLE 50 1-C HB-100-JVLE 50 1-C HB-470-JVLE 50 1-C HB-101-JVLE VJ1 206Y104KXAT/63 0 293 D105X903 5B 27597 27605 3224 W-103 BZV55C 5V1 PD5 5015S M X3 -3 0-C1/10 C M anufacturer ETSA TECK TEKELEC TEKELEC TEKELEC TEKELEC TEKELEC TEKELEC VISH AY Vishay-Spragu e BOUR NS BOUR NS BOUR NS OM N ITEC H STM icro electronics M ETCLAD 4/5 DB-915-12W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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